发明名称 PRESSURE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a pressure sensor with a transistor circuit that is configured to suppress the occurrence of short-circuit between a source electrode and a drain electrode.SOLUTION: The transistor circuit of the pressure sensor comprises: a transistor including a gate electrode, a source electrode, a drain electrode, an intermediate electrode and a semiconductor layer; and a pressure sensitive element. One of the source electrode and the drain electrode is electrically connected to the pressure sensitive element, and the other of the source electrode and the drain electrode is electrically connected to a bit line for transmitting a detection signal. The intermediate electrode, on the other hand, is disposed to be separate from any of the source electrode and the drain electrode. Also a semiconductor layer is provided between the intermediate electrode and the source electrode and between the intermediate electrode and the drain electrode.SELECTED DRAWING: Figure 3
申请公布号 JP2016121974(A) 申请公布日期 2016.07.07
申请号 JP20140263436 申请日期 2014.12.25
申请人 DAINIPPON PRINTING CO LTD 发明人 FUJIMOTO SHINYA;MIYOSHI TORU;NAGAE MITSUTAKA;TOMINO KEN
分类号 G01L9/02;G01L9/12 主分类号 G01L9/02
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