| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus having high dispersibility of reaction gas and being capable of depositing a film of good in-plane uniformity.SOLUTION: In a film deposition apparatus performing a film deposition process by supplying multiple types of reaction gases and replacement gas in order, to a substrate W placed between a placement part 2 and a ceiling part 31 in a process chamber with a vacuum atmosphere, a central gas discharge part 4b is arranged above a center part of the substrate W, a gas discharge port 42 for spreading the gas toward the outside in a lateral direction is formed, and a peripheral gas supply part 5 is arranged so as to surround the central gas discharge part 4b and has multiple gas discharge ports 511, 512 formed along a peripheral direction so as to spread the gas toward an outer peripheral side and a central part side of the substrate W in a lateral direction respectively, when seen in a plane view.SELECTED DRAWING: Figure 2 |
