HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device formation method that enables production of semiconductor devices suitable for sub-millimeter wave operation.SOLUTION: A photoresist layer is deposited on a semiconductor substrate 100; a window 106 is formed in the photoresist layer by electron beam lithography; a conformal layer is deposited on the photoresist and in the window 106; and substantially all of the conformal layer is selectively removed from the photoresist layer and a bottom portion of the window to form dielectric sidewalls 110 in the window 106.SELECTED DRAWING: Figure 1D