Semiconductor device having high performance channel

摘要

Semiconductor devices having a high performance channel and method of fabrication thereof are disclosed. Preferably, the semiconductor devices are Metal-Oxide-Semiconductor (MOS) devices, and even more preferably the semiconductor devices are Silicon Carbide (SiC) MOS devices. In one embodiment, a semiconductor device includes a SiC substrate of a first conductivity type, a first well of a second conductivity type, a second well of the second conductivity type, and a surface diffused channel of the second conductivity type formed at the surface of semiconductor device between the first and second wells. A depth and doping concentration of the surface diffused channel are controlled to provide increased carrier mobility for the semiconductor device as compared to the same semiconductor device without the surface diffused channel region when in the on-state while retaining a turn-on, or threshold, voltage that provides normally-off behavior.

主权项

1. A semiconductor device comprising:
a substrate of a first conductivity type; a first well in the substrate, the first well being of a second conductivity type; a second well in the substrate, the second well being of the second conductivity type; and a surface diffused channel of the second conductivity type formed in the substrate between the first and second wells to a depth that is less than 750 Angstroms, wherein the depth and doping concentration of the surface diffused channel are such that a carrier mobility of the semiconductor device is significantly improved as compared to the semiconductor device without the surface diffused channel and the semiconductor device exhibits normally-off behavior.