Thin film transistor and display device using the same

摘要

A display panel including an oxide thin film transistor is disclosed. In the oxide thin film transistor, a part of the active layer between a source region and a drain region is covered with an etch stopper layer, and the etch stopper layer is partially covered by the first electrode and the second electrode of the oxide thin film transistor. The length in which the etch stopper layer is overlapped by the second electrode is greater than the length in which the etch stopper layer is overlapped by the first electrode to suppress threshold voltage shift in the oxide thin film transistor.

主权项

1. A thin film transistor comprising:
a gate electrode; a gate insulating film formed on the gate electrode; an active layer on the gate insulating film, the active layer being formed of an oxide semiconductor material; an etch stopper layer disposed on the active layer; a first electrode connected with a data line, in contact with the active layer, and extended above a part of the etch stopper layer disposed on the active layer; and a second electrode connected with an electrode of a pixel, in contact with the active layer, and extended above a part of the etch stopper layer disposed on the active layer, wherein a length of the second electrode extended toward the first electrode on the etch stopper layer is longer than a length of the first electrode extended toward the second electrode on the etch stopper layer, wherein a cross-sectional width of the gate electrode is greater than that of the active layer.