Conductive line structure with openings

摘要

Wide and narrow mandrels that are used to form sidewall spacers for patterning are formed in a sacrificial layer with openings in wide mandrels near sides of the wide mandrels. Sidewall spacers are formed on the sides of mandrels and the sacrificial layer is removed. The sidewall spacers are then used for patterning of underlying layers.

主权项

1. A process for patterning narrow and wide features comprising:
forming a sacrificial layer; subsequently patterning the sacrificial layer into narrow strips and wide strips, an individual wide strip encompassing one or more openings through the sacrificial layer within a predetermined distance of a side of the individual wide strip; subsequently forming sidewall spacers along sides of the narrow strips and wide strips; subsequently removing the patterned sacrificial layer; subsequently patterning one or more underlying layers according to the sidewall spacers; and wherein the one or more underlying layers are indirectly patterned according to the sidewall spacers by forming secondary sidewall spacers along sides of the sidewall spacers, removing the sidewall spacers, and patterning the one or more underlying layers according to the secondary sidewall spacers.