| 发明名称 | Device and methods for small trench patterning | ||
| 摘要 | A semiconductor device and methods for small trench patterning are disclosed. The device includes a plurality of gate structures, and an etch buffer layer. The etch buffer layer includes an overhang component disposed on the upper portion of the gate structures with an edge that extends laterally. The width between the edges of adjacent overhang components is narrower than the width between adjacent gate structures. | ||
| 申请公布号 | US9478459(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201514802769 | 申请日期 | 2015.07.17 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Chang Ya Hui |
| 分类号 | H01L21/768;H01L21/28;H01L21/311;H01L21/8234;H01L27/105 | 主分类号 | H01L21/768 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of making a semiconductor device, comprising: forming a plurality of gate structures over a semiconductor substrate; and forming an etch buffer layer directly on the gate structures, wherein the etch buffer layer comprises an overhang component with an edge that extends laterally, and wherein a width between the edges of adjacent overhang components is narrower than a width between adjacent gate structures. | ||
| 地址 | Hsin-Chu TW | ||