Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition

摘要

The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

主权项

1. A product including a substrate and a coating deposited on the substrate, wherein the coating is formed using a plasma enhanced chemical vapor deposition (PECVD) method comprising the following steps:
a) providing a plasma that is linear that is made substantially uniform over its length in the substantial absence of Hall current; b) providing precursor and reactant gases proximate to the plasma; c) providing the substrate, wherein at least one surface of the substrate to be coated is proximate to the plasma; d) energizing, partially decomposing, or fully decomposing the precursor gas; and e) depositing the coating on the at least one surface of the substrate using PECVD;wherein the depositing includes bonding or condensing a chemical fragment of the precursor gas containing a desired chemical element for coating on the at least one surface of the substrate.