| 摘要 |
PROBLEM TO BE SOLVED: To easily inhibit temperature rise of a surface structure in an annealing process in a manufacturing method of a vertical semiconductor device in which the surface structure is formed in a first region on a surface side of a semiconductor substrate and a diffusion layer is formed in a second region on a rear face side of the semiconductor substrate.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: a first impurity implantation process of implanting a first impurity into a third region between a first region and a second region of the semiconductor substrate; a second impurity implantation process of implanting a second impurity from a rear face side of the semiconductor substrate into the second region; and an annealing process of irradiating the semiconductor substrate with laser from the rear face side of the semiconductor substrate to activate the second impurity after the first impurity implantation process and the second impurity implantation process. The first impurity does not influence a conductivity type of the third region and the second impurity influences a conductivity of the second region, and crystal defects formed in the third region by the first impurity implantation process is recrystallized in the annealing process.SELECTED DRAWING: Figure 3 |
