| 摘要 |
PROBLEM TO BE SOLVED: To provide a top-gate organic semiconductor transistor capable of improving mobility while inhibiting increase in gate drive voltage.SOLUTION: In an organic semiconductor transistor, at least a portion of a gate insulation film 5, which contacts an organic semiconductor thin film 4 is a composite of an organic metallic compound and a metal oxide. Alucone, for example, is used as the organic metallic compound, and alumina is used as the metal oxide. Alucone and alumina are chemically bound to form a composite in a state where regions of Alucone and alumina cannot be physically divided. This makes it possible to inhibit increase in gate drive voltage while inhibiting deterioration in mobility.SELECTED DRAWING: Figure 1 |
