发明名称 |
Semiconductor memory device and method of controlling a threshold voltage of the same |
摘要 |
A semiconductor memory device includes a reference current generating circuit that generates a reference current corresponding to a threshold voltage of a memory cell. A current comparing circuit compares a current across the memory cell when data is written to the memory cell, with the reference current. A control circuit controls the writing operation in response to a result of the comparison.
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申请公布号 |
US6157571(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19990379801 |
申请日期 |
1999.08.24 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
SUZUKI, KOJI |
分类号 |
G11C16/02;G11C5/14;G11C16/04;G11C16/06;G11C16/10;(IPC1-7):G11C16/10 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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