| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide semiconductor laser element ensuring lower noise and higher reliability. SOLUTION: The semiconductor laser element comprises a quantum well active layer 105 formed of a ZnO barrier layer and a Cd<SB>0.1</SB>Zn<SB>0.9</SB>O well layer and a saturated absorption layer 108 of p-type In<SB>0.25</SB>Ga<SB>0.75</SB>N formed independently to such quantum well active layer 105 for the purpose of self-oscillation. Accordingly, noise and power consumption can be lowered. COPYRIGHT: (C)2005,JPO&NCIPI
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