| 摘要 |
A solid-state imaging device 1 includes N pixel sections 101 to 10N, transimpedance circuits 20a and 20b, integrating circuits 30a and 30b, and a difference arithmetic circuit 40. Each pixel section 10n includes a photoelectric converting circuit including a photodiode, and a first holding circuit and a second holding circuit which hold an output voltage of the photoelectric converting circuit. A voltage held by the first holding circuit of each pixel section 10n is input into the difference arithmetic circuit 40 through a common wire 50a, the transimpedance circuit 20a, and the integrating circuit 30a. A voltage held by the second holding circuit of each pixel section 10n is input into the difference arithmetic circuit 40 through a common wire 50b, the transimpedance circuit 20b, and the integrating circuit 30b. A voltage corresponding to a difference between the voltages output from the integrating circuits 30a and 30b, respectively, is output from the difference arithmetic circuit 40.
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