发明名称 TILTED PLASMA DOPING
摘要 A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
申请公布号 US2008317968(A1) 申请公布日期 2008.12.25
申请号 US20080200178 申请日期 2008.08.28
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 SINGH VIKRAM;BUFF JAMES STEVE;DORAI RAJESH
分类号 C23C14/00 主分类号 C23C14/00
代理机构 代理人
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