发明名称 GAS SUPPLY MECHANISM AND SUBSTRATE PROCESSING APPARATUS
摘要 A processing gas supply hole is constituted with a gas outlet hole formed at an electrode plate and a gas injection hole formed at a processing gas supply mechanism main unit. At the gas injection hole, a processing gas having flowed in on the upstream side is injected toward the gas outlet hole through an injection opening of a nozzle portion disposed on the downstream side, so as to generate a suction force at a suction flow passage formed around the nozzle portion by taking advantage of the ejector defect.
申请公布号 US2008314523(A1) 申请公布日期 2008.12.25
申请号 US20080127311 申请日期 2008.05.27
申请人 TOKYO ELECTRON LIMITED 发明人 IIZUKA HACHISHIRO
分类号 H01L21/306;C23C16/44 主分类号 H01L21/306
代理机构 代理人
主权项
地址