发明名称 |
Manufacture method for ZnO-containing compound semiconductor layer |
摘要 |
<p>A manufacture method for a ZnO-containing compound semiconductor layer has the steps of: (a) preparing a substrate; and (b) growing a ZnO-containing semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as surfactant. There is provided the manufacture method for the ZnO-containing compound semiconductor layer with improved flatness.</p> |
申请公布号 |
EP2031649(A2) |
申请公布日期 |
2009.03.04 |
申请号 |
EP20080012033 |
申请日期 |
2008.07.03 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
YAMAMURO, TOMOFUMI;SANO, MICHIHIRO;KATO, HIROYUKI;OGAWA, AKIO |
分类号 |
H01L21/363;H01L33/06;H01L33/28 |
主分类号 |
H01L21/363 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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