发明名称 Mo合金スパッタリングターゲット材の製造方法およびMo合金スパッタリングターゲット材
摘要 The invention provides a manufacturing method of a Mo alloy sputtering target material and the sputtering target material. The sputtering target material is low in resistance, excellent in heat resistance, moisture resistance, and closeness with a substrate, high in intensity and purity, and non-magnetic, as well as is suitable for electrodes and wiring films. The manufacturing method of the Mo alloy sputtering target material includes mixing Mo powder with more than one or two Ni alloy powder to satisfy the following combination, and then performing pressure sintering. The combination comprises Ni containing 10-49 atom%, Nb containing 1-20 atom%, the total of Ni and Nb less than 50 atom%, and the balance being Mo and unavoidable impurities.
申请公布号 JP5958822(B2) 申请公布日期 2016.08.02
申请号 JP20120247430 申请日期 2012.11.09
申请人 日立金属株式会社 发明人 村田 英夫;上灘 真史;井上 惠介
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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