| 摘要 |
In the preferred embodiment of the present invention, narrow bandgap II-VI compound semiconductor HgxCd1-xTe (0.1@x@0.5) (HgCdTe) wafers are annealed under Cd supersaturated conditions by exposing the HgCdTe planar or mesa surfaces to a Cd molecular beam in a vacuum deposition system before, during, and/or after anneals performed during individual photodiode fabrication process steps or HgCdTe epitaxial growth steps for eliminating or neutralizing the bulk or interfacial defects.
|
