| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method by which a fine resist pattern with a good profile can be formed by an easy process without much depending on a pattern type.SOLUTION: The pattern forming method of the present invention includes: a step of forming a prepattern that is insoluble or hardly soluble in an organic solvent; a step of forming a resin layer on at least a side face of the prepattern; a step of heating the prepattern and the resin layer so as to convert an adjacent portion of the resin layer to the prepattern into insoluble or hardly soluble in an organic solvent without accompanied by an increase in a molecular weight; and a step of removing a portion of the resin layer other than the adjacent portion by use of an organic solvent. The resin layer is formed from a first composition comprising: a first polymer the solubility of which in an organic solvent decreases by an action of an acid; and an ester-based solvent represented by R-C(=O)OR', where R represents a hydrocarbon group having 1-5 carbon atoms and R' represents a hydrocarbon group having 1-10 carbon atoms. The first polymer has a weight average molecular weight of 13,000 or more and 150,000 or less.SELECTED DRAWING: Figure 1 |
