Storage Circuit and Semiconductor Device

摘要

The storage circuit includes first and second logic circuits, first and second transistors whose channel formation regions include an oxide semiconductor, and a capacitor. The first and second transistors are connected to each other in series, and the capacitor is connected to a connection node of the first and second transistors. The first transistor functions as a switch that controls connection between an output terminal of the first logic circuit and the capacitor. The second transistor functions as a switch that controls connection between the capacitor and an input terminal of the second logic circuit. Clock signals whose phases are inverted from each other are input to gates of the first and second transistors. Since the storage circuit has a small number of transistors and a small number of transistors controlled by the clock signals, the storage circuit is a low-power circuit.

主权项

1. A semiconductor device comprising:
a first transistor; a second transistor; a first capacitor; a first inverter; and a second inverter, wherein one of a source and a drain of the first transistor is electrically connected to an electrode of the first capacitor, wherein one of a source and a drain of the second transistor is electrically connected to the electrode of the first capacitor, wherein the other of the source and the drain of the second transistor is electrically connected to an input terminal of the first inverter, wherein an output terminal of the first inverter is electrically to an input terminal of the second inverter, wherein each of the first transistor and the second transistor comprises a channel formation region comprising an oxide semiconductor, and wherein a drive capability of the second inverter is higher than a drive capability of the first inverter.