发明名称 |
Field effect transistor on insulating layer and manufacturing method |
摘要 |
A field effect transistor has source 12, body 10 and drain 8 formed on an insulating layer 4. Implant regions 40 are implanted under the source 12, laterally aligned with the source 12 by implantation through opening in the source mask. The ruggedness of the transistor may thereby be improved without affecting the doping in channel region 19. |
申请公布号 |
GB0126215(D0) |
申请公布日期 |
2002.01.02 |
申请号 |
GB20010026215 |
申请日期 |
2001.11.01 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
|
分类号 |
H01L29/786;H01L21/336;H01L29/10;H01L29/78 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|