摘要 |
Connection structure (5) for attaching a semiconductor chip (2) to a metal substrate (4) is provided which comprises a plurality of electrically conducting layers (11,12,13,14) arranged in a stack. The stack comprises a contact layer (11) for providing an ohmic contact to a semiconductor chip (2), at least one mechanical decoupling layer (12) for mechanically decoupling the semiconductor chip (2) and the metal substrate (4), at least one diffusion barrier layer (13) and a diffusion solder layer (14) for providing a diffusion soldered mechanical bond and an electrical connection to a metal substrate (4). The mechanical decoupling layer (12) is positioned in the stack between the diffusion barrier layer (13) and the contact layer (11) and serves to relieve stress and reduce crack formation during thermal cycling due to differences in thermal expansion coefficients. |