| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming method which can cope with the tendency of refining a semiconductor structure, and improve an overhang and asymmetry in an opening part of a via hole and a trench in a coating film formed on a substrate, and to provide an apparatus therefor. SOLUTION: This film-forming method comprises the steps of: forming the coating film for forming a metallic wire on the substrate with a sputtering technique, an ALD technique or a CVD technique; and while the coating film is being formed or after the coating film has been formed, irradiating the coating film formed on the substrate with ions of a rare gas of argon, neon or the like having ion energy of 300 to 10,000 eV in an approximately parallel direction to the substrate to appropriately change the shape of the coating film. COPYRIGHT: (C)2008,JPO&INPIT
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