| 摘要 |
The present invention is directed to an SOI device with charging protection and methods of making same. In one illustrative embodiment, a device is formed on an SOI substrate including a bulk substrate, a buried insulation layer and an active layer. The device includes a transistor formed in an isolated portion of the active layer, the transistor including a gate electrode and a source region. The device further includes a first conductive bulk substrate contact extending through the active layer and the buried insulation layer, the first conductive bulk substrate contact being conductively coupled to the source region and the bulk substrate, and a second conductive bulk substrate contact extending through the active layer and the buried insulation layer, the second conductive bulk substrate being conductively coupled to the gate electrode and the bulk substrate.
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