发明名称 |
THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR AND IMAGE DISPLAY DEVICE |
摘要 |
<p>A method for fabricating a thin-film transistor is provided whereby isolation of transistor devices is realized and the performance and the stability of the product thin-film transistor are improved. The thin-film transistor includes a substrate; a gate electrode laminated on the substrate; a gate insulating layer laminated on the substrate and the gate electrode; a recessed portion provided in the gate insulating layer; a semiconductor layer formed in the recessed portion of the gate insulating layer; and a source electrode and a drain electrode connected to the semiconductor layer at respective positions which are spaced apart from each other.</p> |
申请公布号 |
KR20130108559(A) |
申请公布日期 |
2013.10.04 |
申请号 |
KR20137007143 |
申请日期 |
2011.09.05 |
申请人 |
TOPPAN PRINTING CO., LTD. |
发明人 |
MURATA KODAI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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