COMPOSITE COMPRISING AT LEAST TWO SEMICONDUCTOR SUBSTRATES AND PRODUCTION METHOD
摘要
The invention relates to a composite (1) comprising a first semiconductor substrate (4) having at least one MEMS-component (2) and at least one second semiconductor substrate (4), wherein at least one layer (6) comprising germanium is bonded eutectically with at least one layer (3) comprising aluminum. According to the invention, the layer (3) comprising aluminum is provided on the first semiconductor substrate (1) and the layer (6) comprising germanium on the second semiconductor substrate (4). The invention further relates to a production method for a composite (1).
申请公布号
WO2009049958(A2)
申请公布日期
2009.04.23
申请号
WO2008EP61550
申请日期
2008.09.02
申请人
ROBERT BOSCH GMBH;FRANKE, AXEL;TRAUTMANN, ACHIM;FEYH, ANDO;KNIES, SONJA