Circuit with transistors integrated in three dimensions with a dynamically adjustable voltage threshold vt

摘要

The device has a silicon on insulator type substrate (100) topped with a stack of layers, and a low level transistor (T11) e.g. MOSFET, located at level of the stack of layers. The transistor (T11) comprises a grid electrode (108) separated from a channel zone (116) of a high level transistor (T21) by an intermediary of an isolating zone (120) between the grid electrode and the channel zone of the transistor (T21). A modulation unit modulates threshold voltage of the transistor (T21), and has a polarization unit applying variable potentials to the grid electrode during two phases respectively.