发明名称 Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays
摘要 A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.
申请公布号 US9383452(B2) 申请公布日期 2016.07.05
申请号 US201214352538 申请日期 2012.10.24
申请人 Brookhaven Science Associates, LLC 发明人 Li Zheng;Chen Wei
分类号 G01T1/02;G01T1/29 主分类号 G01T1/02
代理机构 代理人 Price Dorene M.
主权项 1. A method of detecting radiation, comprising, detecting radiation by an array of drift detector cells; reducing overheating and power consumption of the drift detector array during the detection by connecting the drift detector array to a spiral biasing adaptor (SBA) configured to function as a voltage divider.
地址 Upton NY US
您可能感兴趣的专利