发明名称 |
Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays |
摘要 |
A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array. |
申请公布号 |
US9383452(B2) |
申请公布日期 |
2016.07.05 |
申请号 |
US201214352538 |
申请日期 |
2012.10.24 |
申请人 |
Brookhaven Science Associates, LLC |
发明人 |
Li Zheng;Chen Wei |
分类号 |
G01T1/02;G01T1/29 |
主分类号 |
G01T1/02 |
代理机构 |
|
代理人 |
Price Dorene M. |
主权项 |
1. A method of detecting radiation, comprising,
detecting radiation by an array of drift detector cells; reducing overheating and power consumption of the drift detector array during the detection by connecting the drift detector array to a spiral biasing adaptor (SBA) configured to function as a voltage divider. |
地址 |
Upton NY US |