| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element having a group III nitride semiconductor layer, having low dislocation density, excellent in crystallinity.SOLUTION: The light-emitting element includes a semiconductor layer on a crystal substrate having a convex structure. A position of a peak top of a cathode luminescence spectrum of the semiconductor layer is greater than or equal to 446 nm and less than or equal to 452 nm. A half width of the peak is greater than or equal to 15 nm and less than 25 nm.SELECTED DRAWING: Figure 4 |
