| 摘要 |
The present invention relates to a method for patterning an underlying layer. The method comprises the steps of: providing a guiding layer on the underlying layer, the guiding layer including guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first polymer component and a second polymer component, whereby one of the components aligns to the guiding structures by chemo-epitaxy; thereafter, removing the first component of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions between the structures of the second component, and exposing the structures of the second component; removing the structures of the second component, selectively with respect to the structures of the planarizing layer; and patterning the underlying layer by using the structures of the planarizing layer as a mask. |
