| 摘要 |
This semiconductor optical device has a laminated structure configured from an n-type first compound semiconductor layer, an active layer, and a p-type second compound semiconductor layer. The active layer has at least three barrier layers, and well layers sandwiched among the barrier layers, and when the bandgap energy of a barrier layer adjacent to the second compound semiconductor layer is represented by Egp-BR, the bandgap energy of a barrier layer between the well layers is represented by EgWell, and the bandgap energy of a barrier layer adjacent to the first compound semiconductor layer is represented by Egn-BR, formula of Egp-BR>Egn-BR>EgWell is satisfied. |
