| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which does not leave a defect due to ion implantation in a Fin structure part after forming a Fin structure part on a semiconductor silicon substrate, and implanting ion into the Fin structure part, and performing a recovery heat treatment on the semiconductor silicon substrate.SOLUTION: In a semiconductor device manufacturing method comprising the step of forming on a semiconductor silicon substrate, a Fin structure part having a convex shape on the top, and performing ion implantation on the Fin structure part and subsequently, performing a recovery heat treatment on the semiconductor silicon substrate to recrystallize silicon of the Fin structure part, the Fin structure part extends at least in one direction and the Fin structure part is formed in such a manner that the extension direction of the Fin structure part and a {110} direction of the semiconductor silicon substrate are different from each other.SELECTED DRAWING: Figure 1 |
