Semiconductor Device and Radio Frequency Module Formed on High Resistivity Substrate

摘要

A semiconductor device includes a high resistivity substrate, a transistor formed on the high resistivity substrate, and a deep trench device isolation region formed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is formed in the high resistivity substrate. Further, a low concentration well region having the first conductive type is formed on the deep well region, and the transistor is formed on the low concentration well region.

主权项

1. A semiconductor device comprising:
a high resistivity substrate having a first conductive type; a deep well region having a second conductive type and arranged in the high resistivity substrate; a low concentration well region having the first conductive type and arranged on the deep well region; a transistor arranged on the low concentration well region; and a deep trench device isolation region arranged in the high resistivity substrate to at least partially surround the transistor.