发明名称 |
Multi-level cell memory device and associated read method |
摘要 |
A NOR flash memory device comprises a memory cell adapted to store at least two bits of data. A read operation is performed on the memory cell by generating a reference current with a first magnitude to detect the value of a most significant bit (MSB) and generating the reference current with a second magnitude to detect the value of a least significant bit (LSB). The respective values of the MSB and the LSB are detected by comparing the first and second reference currents to an amount of current flowing through the memory cell during the read operation. The respective magnitudes of the first and second reference currents are determined by different reference voltages generated by a reference voltage generator.
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申请公布号 |
US2006126387(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20050296476 |
申请日期 |
2005.12.08 |
申请人 |
KIM DAE-HAN;LEE SEUNG-KEUN |
发明人 |
KIM DAE-HAN;LEE SEUNG-KEUN |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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