Light emitting semiconductor chip

摘要

The chip has a semiconductor body with n and p-conducting regions, where an active region (6) for the radiation generation is arranged between the regions. Electrons and holes guided over respective n and p-regions into the region (6) are recombined under radiation generation. A hole-barrier layer (7) is arranged on the region (6). The layer is formed from indium, gallium, aluminum and nitrate material and is permeable for electrons.