发明名称 |
Method Of Removing Impurities From Metallurgical Grade Silicon To Produce Solar Grade Silicon |
摘要 |
Metallurgical grade silicon is purified by removing metallic impurities and non-metallic impurities. The object is to produce a silicon species that is suitable for use as solar grade silicon. The process involves grinding metallurgical grade silicon containing metallic and non-metallic impurities to a silicon powder consisting of particles of silicon having a diameter of less than about 5 millimeter. While maintaining the ground silicon powder in the solid state, the ground silicon powder is heated to a temperature less than the melting point of silicon (1410° C.) under reduced pressure. The heated ground silicon powder is maintained at that temperature for a period of time sufficient to enable at least one metallic or non-metallic impurity to be removed from the metallurgical grade silicon.
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申请公布号 |
US2007202029(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20040580945 |
申请日期 |
2004.08.27 |
申请人 |
BURNS GARY;RABE JAMES;YILMAZ SEFA |
发明人 |
BURNS GARY;RABE JAMES;YILMAZ SEFA |
分类号 |
C01B33/00;C01B33/037 |
主分类号 |
C01B33/00 |
代理机构 |
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