| 摘要 |
This invention relates to a front contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front co ntact of the photovoltaic device includes a low work-function transparent co nductive oxide (TCO) of a material such as tin oxide, zinc oxide, or the lik e, and a thin high work-function TCO of a material such as oxygen-rich ITO ( indium tin oxide) or the like. The high-work function TCO is located between the low work-function TCO and the uppermost semiconductor layer of the phot ovoltaic device so as to provide for substantial work-function matching betw een the low work-function TCO and the high work-function uppermost semicondu ctor layer of the device in order to reduce a potential barrier for holes ex tracted from the device by the front contact.
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