发明名称 |
Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor |
摘要 |
Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a GaxInyZnz oxide and at least one material selected from the group consisting of a 4A group element, a 4A group oxide, a rare earth element and combinations thereof.
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申请公布号 |
US2009008638(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20080078706 |
申请日期 |
2008.04.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG-HUN;SONG I-HUN;PARK YOUNG-SOO;KIM CHANG-JUNG;LEE EUN-HA;LEE JAE-CHEOL |
分类号 |
H01L29/12;H01L21/336 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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