| 摘要 |
The present invention is a semiconductor device that has achieved small size, high withstand voltage properties and high reliability. The present invention comprises: an electrical field alleviation layer (13) that surrounds an active region on the surface of a semiconductor substrate (11); an insulating film (19) that covers the electrical field alleviation layer; a first electrode (15) which is disposed on top of the active region; a plurality of metal layers (31-35) formed on top of the insulating film at the electrical field alleviation layer formation position; a second electrode (16) that surrounds the plurality of metal layers; and a semi-insulating film (23) disposed on top of the insulating film stretching from the first electrode to the second electrode. The space charge amount of impurities in the electrical field alleviation layer decreases with distance from the active region, and the metal layer width (W)/the distance (D) between outer edges of metal layers decreases with distance from the first electrode. |
