SEMICONDUCTOR DEVICE

摘要

A plurality of unit MISFET elements connected in parallel with each other to make up a power MISFET are formed in an LDMOSFET forming region on a main surface of a semiconductor substrate. A control circuit that controls a gate voltage of the power MISFET is formed in a driver circuit region on the main surface of the semiconductor substrate. A wiring structure having a plurality of wiring layers made of the same metal material is formed on the semiconductor substrate. The gate electrodes of the plurality of unit MISFET elements formed in the LDMOSFET forming region are electrically connected to each other via gate wirings formed in all of the plurality of wiring layers made of the same metal material.

主权项

1. A semiconductor device comprising:
a power MISFET; a driver transistor which outputs a signal to drive a gate of the power MISFET; a signal line which is electrically connected to an output of the driver transistor and is electrically connected to the gate of the power MISFET; a first metal wiring formed in a first wiring layer; and a second metal wiring formed in a second wiring layer, wherein the signal line includes the first metal wiring and the second metal wiring connected to each other.