SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked; a first upper layer gate provided on the stacked body; an interlayer insulating layer provided on the first upper layer gate; an insulating part continuously provided from the first upper layer gate to the substrate and extending in a first direction parallel to a major surface of the substrate; a second upper layer gate; a semiconductor part; a charge storage film; and a semiconductor layer provided from an upper end of the semiconductor part to a portion of the semiconductor part reaching the second upper layer gate. The second upper layer gate is provided on the interlayer insulating layer and the insulating part, and extends on a first surface parallel to the major surface.

主权项

1. A semiconductor memory device comprising:
a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked; a first upper layer gate provided on the stacked body; an interlayer insulating layer provided on the first upper layer gate; an insulating part continuously provided from the first upper layer gate to the substrate and extending in a first direction parallel to a major surface of the substrate; a second upper layer gate provided on the interlayer insulating layer and the insulating part, and extending on a first surface parallel to the major surface; a semiconductor part extending from the second upper layer gate to the substrate; a charge storage film provided between the semiconductor part and the plurality of electrode layers; and a semiconductor layer provided from an upper end of the semiconductor part to a portion of the semiconductor part reaching the second upper layer gate.