TFT ARRAY SUBSTRATE STRUCTURE

摘要

The present invention provides a TFT array substrate structure, which includes first and second gates (11, 13), a semiconductor layer (20), first and second sources (31, 33), and first and second drains (42, 44). The first gate (11) and the first drain (42) are arranged to overlap in space so as to form a first overlapping zone (D). The second gate (13) and the second drain (44) are arranged to overlap in space so as to form a second overlapping zone (E). The first gate (11) has a first edge (113) corresponding to the first overlapping zone (D). The second gate (13) has a second edge (133) corresponding to the second overlapping zone (E). The first edge (113) and the first drain (42) intersect in space in an inclined manner. The second edge (133) and the second drain (44) intersect in space in an inclined manner. When the first and second drains (42, 44) are moved relative to the first and second gates (11, 13), areas of the first overlapping zone (D) and the second overlapping zone (E) undergo identical change.

主权项

1. A thin-film transistor (TFT) array substrate structure, comprising: first and second gates, a semiconductor layer arranged on the first and second gates, first and second sources arranged on the semiconductor layer, and first and second drains arranged on the semiconductor layer, the first and second gates being electrically connected, the first and second sources being electrically connected, the first gate and the first drain being arranged to overlap in space so as to form a first overlapping zone, the second gate and the second drain being arranged to overlap in space so as to form a second overlapping zone, the first gate having a first edge corresponding to the first overlapping zone, the second gate having a second edge corresponding to the second overlapping zone, the first edge and the first drain intersecting in space in an inclined manner, the second edge and the second drain intersecting in space in an inclined manner, so that when the first and second drains are moved relative to the first and second gates, areas of the first overlapping zone and the second overlapping zone undergo change in the same direction.