| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method for forming a fine pattern.SOLUTION: The method for forming a fine pattern includes steps of: applying a resist on a substrate 101 where an underlay film 102 is formed and prebaking the resist to form a resist film 103; selectively exposing the resist film; heating and then developing the resist film 103 to form a resist pattern 104; applying a coating liquid comprising a polymer and a solvent to the resist pattern 104 to cover; drying the coating liquid and then heating at from 80°C to 130°C to form a coating film 105; rinsing the coating film with the solvent component to form a pattern composed of the resist pattern 104 coated with a resin film 106; subjecting the resin film 106 to an etch-back process to expose an upper surface of the resist pattern 104 and to form a pattern comprising the residual part of the resin film 106; and removing the resist pattern 104 and then dry-etching the underlay film 102 by using a pattern 107 composed of the residual part of the resin film as a mask.SELECTED DRAWING: Figure 3 |
