| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has improved heat dissipation properties.SOLUTION: A semiconductor device of an embodiment comprises: a first semiconductor region; a plurality of second semiconductor regions provided on the first semiconductor region; a plurality of third semiconductor regions provided on the plurality of second semiconductor regions, respectively; an interlayer insulation film provided on the plurality of second semiconductor regions and on the plurality of the third semiconductor regions; a first electrode provided under the first semiconductor region; a second electrode provided on the interlayer insulation film; a plurality of first contact regions which extend in a first direction from the first electrode toward the second electrode and electrically connect the plurality of third semiconductor region and the second electrode to contact the interlayer insulation film; a plurality of second contact regions which extend in the first direction and provided between the neighboring first contact regions to contact the second electrode and the interlayer insulation film; and a third electrode provided on any of the plurality of second semiconductor regions via the fist insulation film.SELECTED DRAWING: Figure 1 |
