发明名称 COMPOUND SEMICONDUCTOR LAYER AND MANUFACTURING METHOD OF THE SAME, AND COMPOUND THIN FILM SOLAR CELL AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a compound semiconductor layer which is formed by a nanoparticle coating and burning method without causing deterioration in manufacturing throughput, has a thickness capable of sufficiently absorbing sunlight, and which inhibits generation of cracks.SOLUTION: The compound semiconductor layer comprises a first compound semiconductor film composed of a continuous film and a second compound semiconductor film which is formed on the first compound semiconductor film and has gapped parts. It is favorable that such compound semiconductor layer is formed by a nanoparticle coating and burning method.
申请公布号 JP2013222762(A) 申请公布日期 2013.10.28
申请号 JP20120092221 申请日期 2012.04.13
申请人 SHARP CORP 发明人 KUZUMOTO YASUTAKA;IZUMI MAKOTO;YOSHIKAWA HIROFUMI
分类号 H01L21/368;H01L31/04 主分类号 H01L21/368
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