| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device enabling further area enlargement of SOI structure, while suppressing generation of crystal defects. SOLUTION: A groove of depth larger than that of the bottom surface of a first semiconductor layer 11 is formed, at a location where a first semiconductor layer (SiGe) 11 and a second semiconductor layer (Si) 12 are formed by epitaxial growth on the substrate of bulk. After depositing a support medium 41 so as to embed the groove, dry etching of the support medium 41 is carried out so as to form a shape of the element region, and subsequently, dry etching of the second semiconductor layer 12/the first semiconductor layer 11 is carried out. Furthermore, when the first semiconductor layer 11 is selectively etched with nitrohydrofluoric acid in this state, a cavity is formed under the second semiconductor layer 12, in a form with the second semiconductor layer 12 hung downward from the support medium 41. Then, the SOI structure is formed by filling up the cavity with an SiO<SB>2</SB>film, for example, by thermal oxidation. A compressed stress film is used for this support medium 41. COPYRIGHT: (C)2008,JPO&INPIT
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