| 摘要 |
An open-base semiconductor diode device has an emitter, base, and collector layers. The layers are configured and doped such that the device has an IV characteristic with: i. a punchthrough region beginning at a voltage Vpt with positive resistance, followed by, and ii. an avalanche region including a positive resistance stage beginning with conductivity modulation at Vcrit and Icrit and having a resistance Rcrit, iii. wherein the values of Vcrit, Icrit and Rcrit are set according to the layer configuration and doping. The device may have a double-base structure, and the width of a lower-doped base region may be minimised such that current density Jcrit at which the conductivity modulation occurs due to avalanche is increased. In one example, the device comprises a N-N+ or a P-P+ double-emitter. Thickness of N- or P- layers may be minimised such that the current-carrying capability is maximised and the doping of this layer does not affect the current-carrying capability of the device.
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