发明名称 Semiconductor device and method for fabricating the same
摘要 This invention discloses a semiconductor device and a method for fabricating the same. The method includes providing a flexible carrier board having a first surface and a second surface opposite thereto; forming a metal lead layer and a first heat dissipating metal layer on the first surface of the flexible carrier board, and forming a second heat dissipating metal layer on the second surface of the flexible carrier board; providing a chip having an active surface and an opposed non-active surface, wherein a plurality of solder pads are formed on the active surface of the chip, each of the solder pads has a metal bump formed thereon and corresponding in position to the metal lead layer, and heat dissipating bumps are formed between the metal bumps corresponding in position to the first heat dissipating metal layer.
申请公布号 US2009008801(A1) 申请公布日期 2009.01.08
申请号 US20080217365 申请日期 2008.07.02
申请人 SILICONWARE PRECISION INDUSTRIES CO., LTD. 发明人 LAI JENG-YUAN;HUANG CHIEN-PING;KE CHUN-CHI;WANG YU-PO;YEN CHIAO-HUNG
分类号 H01L23/52;H01L21/00 主分类号 H01L23/52
代理机构 代理人
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