| 摘要 |
To provide a method for manufacturing a TFT substrate in which a channel length can be stably formed while the number of masks is reduced, and a method for manufacturing a TFT substrate which can individually control impurity concentrations for channels of an n-type TFT and a p-type TFT without increasing the number of masks. A method for manufacturing a TFT substrate includes processing a gate of the n-type TFT, a gate of the p-type TFT, and an upper capacitor electrode by using a half-tone mask instead of some of normal masks to reduce the number of masks, and changing impurity concentrations of semiconductor films located in regions which become a channel of the n-type TFT, a source and a drain of the n-type TFT, a channel of the p-type TFT, a source and a drain of the p-type TFT, and an lower capacitor electrode, by using a pattern of the half-tone mask and a normal mask. |
