| 摘要 |
PURPOSE: A contact forming method for a semiconductor device is provided to minimize the loss of hard mask on top of a conductive line by forming a contact with a separated node through an etching process using a mask. CONSTITUTION: A conductive line is formed on a substrate(20). A first insulating layer is formed to cover the conductive line(25). A contact arrangement domain between the conductive lines is exposed on the first insulating layer. A linear first mask pattern is formed to extend in the direction crossing with the conductive line. The first insulating layer is SAC-etched using the first mask pattern as etching barrier to form a contact hole. A conductive film is formed on the overall structure including the contact hole. A second mask pattern which at least covers the contact arrangement domain is formed on the conductive film. The conductive film is etched using the second mask pattern as etching barrier until the conductive line is exposed. A contact(29a) with separated node is formed.
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